Dual Metal Gates : pMOS and nMOS materials integrated into highly scaled CMOS devices
Taking the final step in the quest for dual metal gates, SEMATECH engineers have demonstrated high-k/metal gate stacks that were used to build high-performance nMOS and pMOS transistors in a CMOS configuration. This breakthrough removes the obstacles to commercial implementation of high-k metal gate stacks in transistors for the 45nm and 32nm technologies. It also complements the consortium's identification last year of effective nMOS materials for metal gates and previous success with developing high mobility high-k dielectrics. The combination of these successes provides a powerful tool for extending CMOS technology.
|January 26, 2007 - FeedSee|